vishay general semiconductor esh1pb, esh1pc & ESH1PD document number: 88895 revision: 25-jun-07 www.vishay.com 1 new product high current density surface mount ultrafast rectifiers features ? very low profile - typical height of 1.0 mm ? ideal for automated placement ? glass passivated chip junction ? ultrafast recovery times for high frequency ? low forward voltage drop, low power loss ? low thermal resistance ? meets msl level 1 per j-std-020c, lf max peak of 260 c ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in secondary rectification and freewheeling for ultrafast switching speeds of ac-to-ac and dc-to-dc converters in high temperature conditions for both consumer and automotive applications. mechanical data case: do-220aa (smp) epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end do-220aa (smp) esmp tm series major ratings and characteristics i f(av) 1 a v rrm 100 v, 150 v, 200 v t rr 25 ns v f 0.90 v t j max. 175 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol esh1pb esh1pc ESH1PD unit device marking code pb pc pd maximum repetitive peak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 1.0 a peak forward surge current 10 ms single half sine- wave superimposed on rated load i fsm 50 a operating junction and storage temperature range t j , t stg - 55 to + 175 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage (1) at i f = 0.7 a, t j = 25 c at i f = 1 a, t j = 25 c v f 0.86 0.90 v maximum reverse current at rated v r (1) voltage t j = 25 c t j = 125 c i r 1.0 25 a maximum reverse current at v r = 20 v, t j = 150 c i r 50 a
www.vishay.com 2 document number: 88895 revision: 25-jun-07 vishay general semiconductor esh1pb, esh1pc & ESH1PD new product note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) thermal resistance from junction to ambient and junction to lead mounted on p.c.b. with 5.0 x 5.0 mm copper pad areas. r jl is measured at the terminal of cathode band. r jc is measured at the top centre of the body note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) maximum reverse recovery time at i f = 0.5 a, i r = 1 a, i rr = 0.25 a t rr 25 ns typical reverse recovery time at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % i rm t j = 100 c t rr 25 35 ns typical reverse recovery time at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % i rm t j = 100 c q rr 10 15 nc typical junction capacitance at 4.0 v, 1 mhz c j 25 pf electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol esh1pb esh1pc ESH1PD unit typical thermal resistance (1) r ja r jl r jc 105 15 20 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode esh1pb-e3/84a 0.024 84a 3000 7" diameter plastic tape & reel esh1pb-e3/85a 0.024 85a 10000 13" diameter plastic tape & reel esh1pbhe3/84a (1) 0.024 84a 3000 7" diameter plastic tape & reel esh1pbhe3/85a (1) 0.024 85a 10000 13" diameter plastic tape & reel figure 1. forward current derating curve 0 1.2 95 105 115 125 135 145 155 165 0. 8 1.0 0.2 0.4 0.6 175 t l meas u red at the cathode b and terminal lead temperat u re (c) a v erage for w ard rectified c u rrent (a) figure 2. maximum non-repetitive peak forward surge current 1 10 100 10 20 30 0 40 50 nu m b er of cycles at 50 hz peak for w ard s u rge c u rrent (a)
document number: 88895 revision: 25-jun-07 www.vishay.com 3 esh1pb, esh1pc & ESH1PD vishay general semiconductor new product package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics 0.4 0.6 0. 8 1.2 1.4 0.1 10 1 100 0.01 1.0 0.2 1.6 t j = 150 c t j = 125 c t j = 175 c t j = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 20 40 60 8 0 100 0.1 1 10 100 10 30 50 70 90 0.01 1000 t j = 150 c t j = 125 c t j = 175 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) figure 5. typical junction capacitance figure 6. typical transient thermal impedance 0.1 10 1 100 1 100 10 1000 re v erse v oltage ( v ) j u nction capacitance (pf) 0.01 10 1 100 1 10 100 0.1 1000 t - p u lse d u ration (s) transient thermal impedance (c/ w ) 0.000 (0.00) 0.012 (0.30) 0.013 (0.35) 0.004 (0.10) 0.01 8 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0. 8 5) 0.036 (0.91) 0.024 (0.61) 0.016 (0.40) 0.032 (0. 8 0) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) ref 0.105 (2.67) 0.025 (0.635) 0.100 (2.54) 0.030 (0.762) 0.050 (1.27) cathode b and 0.142 (3.61) 0.126 (3.19) 0.15 8 (4.00) 0.146 (3.70) 0.0 8 6 (2.1 8 ) 0.074 (1. 88 ) 0.0 8 7 (2.20) 0.103 (2.60) do-220aa (smp)
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